TechInsights: TSMC's most advanced embedded RRAM chip (22ULL eRRAM) with breakthrough technology has arrived
TechInsights reported that TSMC has launched the most advanced 22-nanometer embedded RRAM chip, which is adopted by Nordic Semiconductor's nRF54L SoC device. This is the industry's first RRAM with the most advanced 22-nanometer CMOS technology, featuring high density and a wider bit line direction. RRAM, as an emerging storage device, has the potential to replace embedded flash memory
According to the Zhitong Finance and Economics APP, TechInsights reported that it has discovered TSMC's 22ULL embedded RRAM (Resistive Random-Access Memory) chip. The groundbreaking nRF54L SoC device from Nordic Semiconductor, a leader in low-power wireless IoT solutions, uses TSMC's 22ULL embedded RRAM (eRRAM).
TechInsights dismantled the Fanstel EV-BM15 EV Kit and found the Nordic BT 5.4 SoC nRF54L15 device. Since 2019, TSMC has been providing a 40-nanometer RRAM platform, and the current 22-nanometer RRAM is TSMC's second-generation eRRAM. This is the industry's first RRAM with the most advanced 22-nanometer CMOS technology, comparable to embedded STT-MRAM.
The eRRAM memory block density is 17.5 bit/µm2, and the RRAM layer width in the bitline direction is 170 nanometers. The RRAM storage layer is placed on metal 3. ReRAM uses resistance as the basis for switching. Along with other emerging memory devices such as STT-MRAM, FRAM, and PCM, ReRAM is one of the main competitors to replace embedded flash memory (eFlash). ReRAM is not affected by radiation, has high electromagnetic tolerance, and does not have leakage issues because it is not charge-based.
Figure 1: ReRAM (RRAM) product and technology roadmap showing TSMC's 22ULL ReRAM